Full text loading...
(a) Schematic cell structure and cross sectional TEM image for the structure of unstrained Si on . The thicknesses for unstrained, strained SiGe, and BOX layers were 10 nm, 106 nm, and 175 nm, respectively. (b) characteristic curves for SOI and unstrained Si on with a Ge concentration of 8 and capacitor-less memory-cells. Drain current for three different transistor cells was compared by applying a gate bias of 1, 2, and 3 V.
(a) Schematic energy-band diagram for unstrained Si on capacitor-less memory-cell at the equilibrium state. Electron affinity and energy gap of material are less than that of unstrained Si material. (b) Conduction and valence energy band-offset with a varying of Ge concentration. Valence band-offset is much more reliant on Ge concentration than the conduction band.
(a) Effective mobility vs inversion charge for SOI, unstrained Si on with a concentration of 8 and 19% capacitor-less memory-cells. The effective mobility at for unstrained Si on cell is 36.1% lower than SOI cell. (b) vs Ge concentration when the drain bias was applied to 0.05 and 1 V. All are decreased with increasing drain bias because of potential-barrier lowering.
(a) and potential-barrier lowering as a function of Ge concentration. decreases linearly with increasing Ge concentration but potential-barrier lowering value increases exponentially with Ge concentration. (b) Memory margin as a function of Ge concentration. It was confirmed that memory margin at the Ge concentration of is 3.2 times larger than SOI capacitor-less memory-cell.
Article metrics loading...