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Normalized photoemission spectra of the BaCuSeF/ZnTe interface. ZnTe thicknesses are the same for all panels in a row. The vertical lines indicate binding energies used to plot Fig. 2.
(a) Binding energy of the BaCuSeF and ZnTe valence bands calculated from XPS core-level spectra. The dashed line represents the shift in states due to charge transfer from Te atoms. (b) Work function of the BaCuSeF/ZnTe interface. The final configuration of the sample is schematically depicted in the inset.
Alignment of the energy levels of BaCuSeF and ZnTe (a) before and (b) after contact as measured by PES. (c) Band offsets of BaCuSeF with CdTe and calculated from the literature values of the band offsets of these materials with ZnTe. All energies are in electron volt.
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