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Nonvolatile resistive switching memory based on amorphous carbon
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Cross-sectional TEM image of the structure. The left panel of the insets shows a high resolution TEM image of the thin film. The right one shows a corresponding selected electron diffraction pattern. (b) Raman spectrum with the deconvoluted data of the film.

Image of FIG. 2.
FIG. 2.

Typical characteristics of the structure shown in (a) linear scale, and (b) semilogarithmic scale. The insets show the initial electroforming.

Image of FIG. 3.
FIG. 3.

(a) Endurance performance of the memory cell. The resistance values were read out at 0.1 V in each sweep. (b) Evolution of and of the device as a function of the switching cycle.

Image of FIG. 4.
FIG. 4.

Retention performance of the memory cell at RT.

Image of FIG. 5.
FIG. 5.

(a) curves of the memory cell plotted in log-log scale and the linear fitting results in both LRS and HRS. Also shown are the corresponding slopes for different portions. (b) Temperature dependence of the resistance in the LRS of the memory cell.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile resistive switching memory based on amorphous carbon