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Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high- dielectric
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10.1063/1.3409223
/content/aip/journal/apl/96/16/10.1063/1.3409223
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/16/10.1063/1.3409223
/content/aip/journal/apl/96/16/10.1063/1.3409223
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/content/aip/journal/apl/96/16/10.1063/1.3409223
2010-04-21
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-κ dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/16/10.1063/1.3409223
10.1063/1.3409223
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