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Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors
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10.1063/1.3413939
/content/aip/journal/apl/96/16/10.1063/1.3413939
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/16/10.1063/1.3413939
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Optical transmittance spectra of sol-gel derived MIZO films with varying Mg concentration. (b) Plots of vs extracted from Fig. 1(a). (c) The variations in and (d) in the MIZO films with varying Mg content. Inset shows the plot of with varying applied voltage, where .

Image of FIG. 2.
FIG. 2.

HR-TEM plain and cross-sectional images of the sol-gel derived MIZO films with inset SAED patterns with ratios of (a) 0.05, (b) 0.2, and (c) 0.4.

Image of FIG. 3.
FIG. 3.

(a) Schematic cross section of the sol-gel processed MIZO TFTs, which have an inverted staggered bottom-gate structure with ESL. (b) TEM bright-field image of the PVL/Mo/ESL/MIZO/SiNx/Mo/Glass stack. (c) Source-drain current vs gate voltage transfer characteristics for 45-nm-thick TFTs with and , with varying Mg content. (d) Variations in , , (e) , on-current, and with the Mg content.

Image of FIG. 4.
FIG. 4.

Variations in the transfer characteristics of TFTs fabricated with under the NBTS test. , , and , for a duration of 3 h.

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/content/aip/journal/apl/96/16/10.1063/1.3413939
2010-04-23
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/16/10.1063/1.3413939
10.1063/1.3413939
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