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(a) Optical transmittance spectra of sol-gel derived MIZO films with varying Mg concentration. (b) Plots of vs extracted from Fig. 1(a). (c) The variations in and (d) in the MIZO films with varying Mg content. Inset shows the plot of with varying applied voltage, where .
HR-TEM plain and cross-sectional images of the sol-gel derived MIZO films with inset SAED patterns with ratios of (a) 0.05, (b) 0.2, and (c) 0.4.
(a) Schematic cross section of the sol-gel processed MIZO TFTs, which have an inverted staggered bottom-gate structure with ESL. (b) TEM bright-field image of the PVL/Mo/ESL/MIZO/SiNx/Mo/Glass stack. (c) Source-drain current vs gate voltage transfer characteristics for 45-nm-thick TFTs with and , with varying Mg content. (d) Variations in , , (e) , on-current, and with the Mg content.
Variations in the transfer characteristics of TFTs fabricated with under the NBTS test. , , and , for a duration of 3 h.
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