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Plasmonic enhanced quantum well infrared photodetector with high detectivity
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) A schematic of the simulated structure; (b) averaged intensity enhancement ratios in the quantum well active region compared with E intensity without surface plasmonic coupling at a normal incidence; (c) intensity in the x-y plane at the center of the active region at the peak absorption wavelength; (d) intensity in the x-z plane at the y point with the peak intensity at the peak absorption wavelength (the active region of quantum wells is between the white dash lines).

Image of FIG. 2.
FIG. 2.

(a) The growth structure of the QWIP; (b) SEM image of eight periods of quantum well active regions (the brighter region is the doped InGaAs layers); (c) simulated and experimental XRD curves of eight periods of quantum wells.

Image of FIG. 3.
FIG. 3.

(a) Fabricated QWIP device with periodic Au holes on the top of the mesa, the right pattern is connected to the top contact, and the lower pattern is connected to the bottom contact; (b) the enlarged oblique view of the periodic holes in Au film produced by FIB milling.

Image of FIG. 4.
FIG. 4.

The measured dark current density-voltage curve of the device at 78 K.

Image of FIG. 5.
FIG. 5.

The measured responsivity (left) and detectivity (right) spectrum of the device at a normal-incident infrared radiation at the bias of 0.7 V at 78 K (the black curve) and the simulated averaged intensity spectrum (the red curve) in the quantum well active region.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasmonic enhanced quantum well infrared photodetector with high detectivity