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(a) A schematic of the simulated structure; (b) averaged intensity enhancement ratios in the quantum well active region compared with E intensity without surface plasmonic coupling at a normal incidence; (c) intensity in the x-y plane at the center of the active region at the peak absorption wavelength; (d) intensity in the x-z plane at the y point with the peak intensity at the peak absorption wavelength (the active region of quantum wells is between the white dash lines).
(a) The growth structure of the QWIP; (b) SEM image of eight periods of quantum well active regions (the brighter region is the doped InGaAs layers); (c) simulated and experimental XRD curves of eight periods of quantum wells.
(a) Fabricated QWIP device with periodic Au holes on the top of the mesa, the right pattern is connected to the top contact, and the lower pattern is connected to the bottom contact; (b) the enlarged oblique view of the periodic holes in Au film produced by FIB milling.
The measured dark current density-voltage curve of the device at 78 K.
The measured responsivity (left) and detectivity (right) spectrum of the device at a normal-incident infrared radiation at the bias of 0.7 V at 78 K (the black curve) and the simulated averaged intensity spectrum (the red curve) in the quantum well active region.
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