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characteristics of a 100 nm PFO LED using a PEDOT:PSS HIL.
The hole mobility as a function of electric field for two devices with thicknesses of 60 and 100 nm, determined with TEL.
characteristics of PFO hole-only devices with a HIL and fits at 295 K.
Temperature dependence of a 230 nm PFO hole-only device and fits. The inset shows the dependence of the mobility on the charge carrier density according to Eqs. (2)–(5).
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