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Space-charge-limited hole current in poly(9,9-dioctylfluorene) diodes
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10.1063/1.3391668
/content/aip/journal/apl/96/17/10.1063/1.3391668
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3391668
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of a 100 nm PFO LED using a PEDOT:PSS HIL.

Image of FIG. 2.
FIG. 2.

The hole mobility as a function of electric field for two devices with thicknesses of 60 and 100 nm, determined with TEL.

Image of FIG. 3.
FIG. 3.

characteristics of PFO hole-only devices with a HIL and fits at 295 K.

Image of FIG. 4.
FIG. 4.

Temperature dependence of a 230 nm PFO hole-only device and fits. The inset shows the dependence of the mobility on the charge carrier density according to Eqs. (2)–(5).

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/content/aip/journal/apl/96/17/10.1063/1.3391668
2010-04-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Space-charge-limited hole current in poly(9,9-dioctylfluorene) diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3391668
10.1063/1.3391668
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