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Random pn-junctions for physical cryptography
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10.1063/1.3396186
/content/aip/journal/apl/96/17/10.1063/1.3396186
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3396186
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Figures

Image of FIG. 1.
FIG. 1.

Schematics of a crossbar built from rectifying junctions. A size crossbar to be accessible requires diodes with at least rectification ratio. By applying the presented biasing scheme, the light gray diode is addressed by biasing it in forward direction , while all other diodes are zero biased or reverse biased .

Image of FIG. 2.
FIG. 2.

(a) Sketch of the silicon wafer covered with . The active area is structured by wet chemical etching and by defining the ALILE precursor layers in a mask step. (b) Schematics of a vertical cut through the pn-diode structure. The poly-Si is prepared by ALILE on an n-type Si wafer.

Image of FIG. 3.
FIG. 3.

FIB image of the poly--hillocks layer system at the oxide/Si-wafer edge (vertical dashed line). The poly-Si/Si-wafer interface is indicated by the dashed horizontal line. Due to the high material contrast of this method, the Al, Si, and can be clearly distinguished.

Image of FIG. 4.
FIG. 4.

Current-voltage characteristics of 20, 50, and 100 nm thin poly-Si diodes on (a) the highly doped and (b) the weakly doped Si-wafer. Due to the different scattering of the curves, always the best diode was chosen for each parameter set.

Image of FIG. 5.
FIG. 5.

(a) Histogram of at 1 V for the different diode thicknesses for a diode size of . (b) Histogram of at 1 V for the different diode sizes for a poly-Si thickness of 100 nm.

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/content/aip/journal/apl/96/17/10.1063/1.3396186
2010-04-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Random pn-junctions for physical cryptography
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3396186
10.1063/1.3396186
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