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Schematics of a crossbar built from rectifying junctions. A size crossbar to be accessible requires diodes with at least rectification ratio. By applying the presented biasing scheme, the light gray diode is addressed by biasing it in forward direction , while all other diodes are zero biased or reverse biased .
(a) Sketch of the silicon wafer covered with . The active area is structured by wet chemical etching and by defining the ALILE precursor layers in a mask step. (b) Schematics of a vertical cut through the pn-diode structure. The poly-Si is prepared by ALILE on an n-type Si wafer.
FIB image of the poly--hillocks layer system at the oxide/Si-wafer edge (vertical dashed line). The poly-Si/Si-wafer interface is indicated by the dashed horizontal line. Due to the high material contrast of this method, the Al, Si, and can be clearly distinguished.
Current-voltage characteristics of 20, 50, and 100 nm thin poly-Si diodes on (a) the highly doped and (b) the weakly doped Si-wafer. Due to the different scattering of the curves, always the best diode was chosen for each parameter set.
(a) Histogram of at 1 V for the different diode thicknesses for a diode size of . (b) Histogram of at 1 V for the different diode sizes for a poly-Si thickness of 100 nm.
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