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Temperature-dependent energy gap variation in InAs/GaAs quantum dots
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Image of FIG. 1.
FIG. 1.

Temperature-dependent PL emission spectra of different QD samples. (a) The 5-layer QD sample, (b) the 10-layer QD sample, (c) the 20-layer QD sample, and (d) the 30-layer QD sample.

Image of FIG. 2.
FIG. 2.

Temperature-dependent energy gap variation in the 5-QD sample at various temperatures from 12 to 300 K. The dots are the measurement data from the PL emission. Dashed green and red traces: the energy gap shrinking projected by using the Varshni’s formula and the power function ansatz, respectively. Blue and pink traces: calculated energy gaps by using our models at the low and high temperature regions, which show very good agreement with experiment data.

Image of FIG. 3.
FIG. 3.

vs plots for both the 5-layer QD and the 10-layer QD samples. Very good linear relationships between and are found in both the low temperature and the high temperature regions for 5-layer QD and the 10-layer QD samples. The solid lines are the linear curve fittings.


Generic image for table
Table I.

Temperature-dependent equations energy gap for all the QD samples at low and high temperatures.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature-dependent energy gap variation in InAs/GaAs quantum dots