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Scanning electron microscopy image of a SWNT bundle in the FET, enlarged view from the circled area in the inset. Inset shows a large view of the device array fabricated on a silicon-on-insulator wafer.
Current-voltage characteristics of two-tube bundles. (a) Current modulation is superimposed onto the metallic contribution from device I. The inset shows two tubes are separated at the source contact. (b) characteristics obtained from device II. The dotted arrow in the inset represents the direction of the electric field during device operation. The two SWNTs are almost vertically stacked with respect to the electric field. All the measurements were performed at 0.5 V of source-drain voltage.
(a) DPs from experiment (left) and simulation (right). Both diffraction spots and equatorial oscillation match well. (b) Comparison of intensity profiles of the equatorial lines obtained from experiment and simulation. The best match was found with .
(a) Band structure of a small bundle consisting of (26,0)-(21,0) CNTs. The inset shows the band gap opening of the (21,0) CNT. The band gap of (21,0) becomes 18 meV, The original band gap of this CNT is 7 meV. Because of the vdW interaction, the CNTs are deformed. (b) A model structure used in the calculation is shown. The model includes radial deformation for the calculation.
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