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Crystallographic orientation dependence of compositional transition and valence band offset at interface formed using oxygen radicals
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10.1063/1.3407515
/content/aip/journal/apl/96/17/10.1063/1.3407515
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3407515

Figures

Image of FIG. 1.
FIG. 1.

(a) spectrum arising from oxide film formed on Si(100). (b) Intensity of the spectrum in (a) magnified by a factor of 25 to indicate the decomposed spectra.

Image of FIG. 2.
FIG. 2.

as a function of TOA for the oxide film formed on (a) Si(100), (b) Si(111), (c) Si(110), and (d) Si(551).

Image of FIG. 3.
FIG. 3.

(a) spectrum arising from oxide film formed on Si(100). (b) I(, LBE)/I(, HBE) as a function of TOA. (c) as a function of TOA.

Image of FIG. 4.
FIG. 4.

VB spectra and Si VB spectra measured at a PE of 951 eV and a TOA of 52° and VB spectra calculated from these two VB spectra for (a) Si(100), (b) Si(111), (c) Si(110), and (d) Si(551).

Tables

Generic image for table
Table I.

The value of D(I) in each column denotes the AD of IMSs formed on Si(100), Si(111), Si(110), and Si(551). The ratio D(I)/D(S) in each column denotes the AD of IMSs expressed in terms of the number of Si monolayers on Si(100), Si(111), Si(110), and Si(551).

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/content/aip/journal/apl/96/17/10.1063/1.3407515
2010-04-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3407515
10.1063/1.3407515
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