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A high-performance top-gate graphene field-effect transistor based frequency doubler
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10.1063/1.3413959
/content/aip/journal/apl/96/17/10.1063/1.3413959
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3413959
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Geometry and experimental set up of a graphene FET and frequency doubler. (a) Schematic diagram showing the geometry of a top-gate graphene FET. (b) Optical microscope image depicts experimental configuration of the device. The gate electrode is utilized as the input port of the device, and a sinsodial wave is superimposed on on the gate. The drain electrode is connected to an applied voltage through a resistance and is treated as the output port. The source electrode is connected to ground (GND). The inset image is the optical image of the real device, with a dashed line indicating the position of graphene. The scale bar is . (c) AFM image of the graphene device, with graphene width , channel length , top gate length . The dashed block indicates the covered region and the arrow indicates the graphene. The scale bar is . (d) Raman spectrum obtained using a 633 nm laser and from the graphene indicated by the arrows in (c).

Image of FIG. 2.
FIG. 2.

dc characteristics of the G-FET. Transfer characteristic (indicated by the arrow pointing left) and corresponding transconductance (indicated by the arrow pointing right) for a (a) back-gate G-FET (before the top gate was fabricated) and (b) top-gate G-FET, with and the back gate being biased at 40 V. (c) Schematic diagram showing the working principle of G-FET based frequency doubler.

Image of FIG. 3.
FIG. 3.

Measured input and output waveform of the G-FET based frequency doubler. The device is biased at , , and the load resistance . (a) Input and output waveforms with an input frequency of 10 kHz and a peak-to-peak voltage value . (b) Power spectrum obtained via Fourier transforming the output signal in (a). (c) Input and output waveforms with an input frequency of 200 kHz and a peak-to-peak voltage value . (d) Power spectrum obtained via Fourier transforming the output signal in (c).

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/content/aip/journal/apl/96/17/10.1063/1.3413959
2010-04-27
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A high-performance top-gate graphene field-effect transistor based frequency doubler
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3413959
10.1063/1.3413959
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