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Geometry and experimental set up of a graphene FET and frequency doubler. (a) Schematic diagram showing the geometry of a top-gate graphene FET. (b) Optical microscope image depicts experimental configuration of the device. The gate electrode is utilized as the input port of the device, and a sinsodial wave is superimposed on on the gate. The drain electrode is connected to an applied voltage through a resistance and is treated as the output port. The source electrode is connected to ground (GND). The inset image is the optical image of the real device, with a dashed line indicating the position of graphene. The scale bar is . (c) AFM image of the graphene device, with graphene width , channel length , top gate length . The dashed block indicates the covered region and the arrow indicates the graphene. The scale bar is . (d) Raman spectrum obtained using a 633 nm laser and from the graphene indicated by the arrows in (c).
dc characteristics of the G-FET. Transfer characteristic (indicated by the arrow pointing left) and corresponding transconductance (indicated by the arrow pointing right) for a (a) back-gate G-FET (before the top gate was fabricated) and (b) top-gate G-FET, with and the back gate being biased at 40 V. (c) Schematic diagram showing the working principle of G-FET based frequency doubler.
Measured input and output waveform of the G-FET based frequency doubler. The device is biased at , , and the load resistance . (a) Input and output waveforms with an input frequency of 10 kHz and a peak-to-peak voltage value . (b) Power spectrum obtained via Fourier transforming the output signal in (a). (c) Input and output waveforms with an input frequency of 200 kHz and a peak-to-peak voltage value . (d) Power spectrum obtained via Fourier transforming the output signal in (c).
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