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(a) Spectral dependences of the optical absorption coefficient of NiO (solid lines) and (dashed lines) as measured by SE in the as-deposited state and after 30 min FGA at . (b) Spectral dependence of the lateral PC quantum yield Y of 12-nm thick NiO layer measured using a voltage of 2 V applied between two point contacts placed across the circular electrode. The inset illustrates determination of the spectral thresholds (marked by vertical lines) using the plot.
(a) Logarithmic plots of the electron IPE quantum yield as a function of photon energy as measured in capacitors under the indicated positive and negative voltages applied to the top NiO electrode. (b) Determination of the IPE spectral thresholds for the interface using the plot (open symbols, left scale) and for the interface using the plot (filled symbols, right scale).
Top: Schottky plot of IPE spectral thresholds measured at interfaces of with different (semi)conducting materials: NiO (○), (◻), NiO subjected to FGA at (hexagons), Si (▽), metallic Ni (△), and Ni silicide (◇). Lines illustrate linear fits used to extract the zero-field barrier height. Bottom: Schematic energy band diagram of the structure with parameters indicated as determined in the present work.
Spectral curves of electron IPE yield in as-deposited (○) and after 30 min FGA at (◻) measured under the same bias of −2 V applied to the NiO electrode.
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