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Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
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10.1063/1.3418647
/content/aip/journal/apl/96/17/10.1063/1.3418647
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3418647
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Simulated reflectivity spectra with different materials and central wavelengths, dashed line and dotted line indicate the results of and 1480 nm with six pairs of , respectively; dashed dotted line and solid line indicate the results of and 1480 nm with six pairs of , respectively. The wavelength range between two empty circles and full circles are GS and ES zone on the solid line, respectively.

Image of FIG. 2.
FIG. 2.

Simulated and measured reflectivity spectra with and six pairs of . The wavelength range between two empty circles and full circles are GS and ES zone on the short dashed line.

Image of FIG. 3.
FIG. 3.

The temperature dependence of logarithmic threshold current for the two types of reflectivity spectra with , (a) , six pairs of and (b) , six pairs of ; the inset shows the lasing spectrum of the laser under different critical temperature.

Image of FIG. 4.
FIG. 4.

The light-current characteristics measured under pulse bias from 10 to for 1.2 mm cavity length lasers for the two types of reflectivity spectra, (a) , six pairs of and (b) , six pairs of .

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/content/aip/journal/apl/96/17/10.1063/1.3418647
2010-04-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3418647
10.1063/1.3418647
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