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Optical and electronic properties of post-annealed ZnO:Al thin films
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10.1063/1.3419859
/content/aip/journal/apl/96/17/10.1063/1.3419859
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3419859
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Resistivity, carrier mobility, and carrier concentration as a function of the post-annealing temperature for the ZnO and ZnO:Al films.

Image of FIG. 2.
FIG. 2.

Plot of vs for the ZnO and ZnO:Al films at various annealing temperatures. The linear fit for the optical band gap energy is shown as a dotted line.

Image of FIG. 3.
FIG. 3.

X-ray photoemission spectra corresponding to , , and for the ZnO and ZnO:Al films at various annealing temperatures. Each dashed line indicates the binding energy (with respect to the Fermi energy) from the standard ZnO sample.20–22

Image of FIG. 4.
FIG. 4.

Schematic band diagrams of the ZnO and ZnO:Al films. The solid arrow indicates the optical bandgap (obtained from Fig. 2). The dashed arrow indicates the Fermi-level shift obtained from the XPS spectra (Fig. 3 and Table SI). The solid arrow in the conduction band is from the Burstein‑Moss effect of Eq. (3).

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/content/aip/journal/apl/96/17/10.1063/1.3419859
2010-04-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical and electronic properties of post-annealed ZnO:Al thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3419859
10.1063/1.3419859
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