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Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures
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10.1063/1.3419903
/content/aip/journal/apl/96/17/10.1063/1.3419903
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3419903
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Figures

Image of FIG. 1.
FIG. 1.

(a) MM and MS and (b) SM and SS mode LPVs as a function of laser position of x in Co(3.5 nm)/Si structure, where the light wavelength is 832 nm and the light power is 5 mW. (c) Normalized absorption rate of Co(3.5 nm)/Si structure in infrared region. (d) Position sensitivity of LPV in MM mode as a function of laser power with different light wavelength, where “ER” and “TR” represent the experimental results and theoretical results, respectively. Here the contacts’ distance is 3.2 mm. Solid lines in (d) are the plots of Eq. (4), where the parameters are chosen as , , , , and .

Image of FIG. 2.
FIG. 2.

(a) LPV sensitivities in MM mode as a function of light wavelength in Co/Si structures with different Co thickness. (b) LPV sensitivities in MM mode as a function of Co thickness in Co/Si structures with different light wavelengths. Here “ER” and “TR” represent the experimental results and theoretical results, respectively. The light power is 5 mW and the contacts’ distance is 3.2 mm. Solid lines in [(a) and (b)] are the plots of Eq. (6), where the parameters are chosen as , , , and .

Image of FIG. 3.
FIG. 3.

(a) Diagram of LPV mechanism in MS structure. (b) Diagram of transition of light-excited electrons from semiconductor to metal.

Image of FIG. 4.
FIG. 4.

(a) LPV sensitivities response to both light wavelength and metal thickness in MS structure of Co/Si according to Eq. (6). (b) LPV sensitivities response to metal thickness with critical wavelength in different MS structures of Co/Si, Co/Ge, and Co/GaAs according to Eq. (6). Inset shows the critical thickness response to energy gap of the semiconductor. Here the parameters are chosen as , , , , , , and .

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/content/aip/journal/apl/96/17/10.1063/1.3419903
2010-04-27
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3419903
10.1063/1.3419903
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