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Large thermoelectric figure of merit in nanowires
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10.1063/1.3421543
/content/aip/journal/apl/96/17/10.1063/1.3421543
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3421543

Figures

Image of FIG. 1.
FIG. 1.

The electronic band gap shift for NWs vs Ge contents from 0 to 1.

Image of FIG. 2.
FIG. 2.

vs Ge content with different carrier concentration for n-type and p-type wires (a). vs Ge content with different carrier concentration for n-type and p-type wires (b).

Image of FIG. 3.
FIG. 3.

Thermal power factors of NWs vs carrier concentration with three different Ge contents for n-type and p-type wires (a). Maximum power factors vs Ge content for n-type and p-type wires (b).

Image of FIG. 4.
FIG. 4.

vs the Ge content for n-type wires.

Tables

Generic image for table
Table I.

The charge mobility in alloys for different Ge content . The mobility values are calculated from Ref. 17.

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/content/aip/journal/apl/96/17/10.1063/1.3421543
2010-04-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large thermoelectric figure of merit in Si1−xGex nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3421543
10.1063/1.3421543
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