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Energy band diagram of floating gate memory with PtSi NCs. Deep quantum well of 3.95 eV exists between PtSi and .
XPS result of PtSi NCs on substrate and peak position confirms the chemical nature of NCs is PtSi. The inset is the SEM image of PtSi NCs on substrate. The density and average size of PtSi NCs is and 5 nm, respectively.
C-V sweep of MOS memory device with PtSi NCs under different scanning gate voltage from ±2 to ±10 V.
Plots of flatband voltage shift and corresponding electrons (a) and holes (b) per NC as a function of programming/erasing voltage.
Retention characteristics of PtSi NC memory at programmed and erased states.
Endurance performance of PtSi NC memory.
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