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Synthesis of high-density PtSi nanocrystals for memory application
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10.1063/1.3421546
/content/aip/journal/apl/96/17/10.1063/1.3421546
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3421546
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy band diagram of floating gate memory with PtSi NCs. Deep quantum well of 3.95 eV exists between PtSi and .

Image of FIG. 2.
FIG. 2.

XPS result of PtSi NCs on substrate and peak position confirms the chemical nature of NCs is PtSi. The inset is the SEM image of PtSi NCs on substrate. The density and average size of PtSi NCs is and 5 nm, respectively.

Image of FIG. 3.
FIG. 3.

C-V sweep of MOS memory device with PtSi NCs under different scanning gate voltage from ±2 to ±10 V.

Image of FIG. 4.
FIG. 4.

Plots of flatband voltage shift and corresponding electrons (a) and holes (b) per NC as a function of programming/erasing voltage.

Image of FIG. 5.
FIG. 5.

Retention characteristics of PtSi NC memory at programmed and erased states.

Image of FIG. 6.
FIG. 6.

Endurance performance of PtSi NC memory.

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/content/aip/journal/apl/96/17/10.1063/1.3421546
2010-04-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Synthesis of high-density PtSi nanocrystals for memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3421546
10.1063/1.3421546
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