1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Phototransistor with nanocrystalline Si/amorphous Si bilayer channel
Rent:
Rent this article for
USD
10.1063/1.3422479
/content/aip/journal/apl/96/17/10.1063/1.3422479
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3422479
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional view and (b) photomicrograph of phototransistor.

Image of FIG. 2.
FIG. 2.

(a) Dark and ambient light transfer characteristics, and (b) EQE as a function of photon flux at .

Image of FIG. 3.
FIG. 3.

Spectral-response characteristics of the phototransistor.

Image of FIG. 4.
FIG. 4.

Time dependence of the threshold voltage shift of nc-Si:H and TFTs under constant gate-bias stress.

Loading

Article metrics loading...

/content/aip/journal/apl/96/17/10.1063/1.3422479
2010-04-30
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phototransistor with nanocrystalline Si/amorphous Si bilayer channel
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/17/10.1063/1.3422479
10.1063/1.3422479
SEARCH_EXPAND_ITEM