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Electron transport in rubrene single-crystal transistors
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/content/aip/journal/apl/96/18/10.1063/1.3419899
2010-05-06
2014-10-31

Abstract

We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to is achieved by performing multiple purifications of single crystals and device aging inside an -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.

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Scitation: Electron transport in rubrene single-crystal transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/18/10.1063/1.3419899
10.1063/1.3419899
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