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Electron transport in rubrene single-crystal transistors
1.M. Yamagishi, J. Takeya, Y. Tominari, Y. Nakazawa, T. Kuroda, S. Ikehata, M. Uno, T. Nishikawa, and T. Kawase, Appl. Phys. Lett. 90, 182117 (2007).
5.J. Takeya, M. Yamagishi, Y. Tominari, R. Hirahara, Y. Nakazawa, T. Nishikawa, T. Kawase, T. Shimoda, and S. Ogawa, Appl. Phys. Lett. 90, 102120 (2007).
6.J. Takeya, J. Kato, K. Hara, M. Yamagishi, R. Hirahara, K. Yamada, Y. Nakazawa, S. Ikehata, K. Tsukagoshi, Y. Aoyagi, T. Takenobu, and Y. Iwasa, Phys. Rev. Lett. 98, 196804 (2007).
See supplementary material at http://dx.doi.org/10.1063/1.3419899
for S1: multiple purification process of the single crystals. S2: the optical characterization of electron traps removal. S3: aging time dependence of electron transport in the five-times purified single crystal device.[Supplementary Material]
21.A. J. Maliakal, J. Y. C. Chen, W. -Y. So, S. Jockusch, B. Kim, M. F. Ottaviani, A. Modelli, N. J. Turro, C. Nuckolls, and A. P. Ramirez, Chem. Mater. 21, 5519 (2009).
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We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to is achieved by performing multiple purifications of single crystals and device aging inside an -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.
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