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Nanoscale chemical state analysis of resistance random access memory device reacting with Ti
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10.1063/1.3373594
/content/aip/journal/apl/96/19/10.1063/1.3373594
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3373594
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The relation between the initial resistance of the device in the as deposited state and the initial resistance of the device after PDA . The read out voltages are (open circles) and −0.2 V (open triangles). is the number of the tested devices. Symbols in the box correspond to the device without degradation.

Image of FIG. 2.
FIG. 2.

(a), (b) curves for Ti(50)-AD and Ti(50)-PDA. The arrows indicate the direction of the voltage sweep. [(c) and (d)] the unipolar resistance switching in Ti(5)-AD and Ti(5)-PDA. [(e) and (f)] typical curves observed in Pt-AD and Pt-PDA.

Image of FIG. 3.
FIG. 3.

[(a)–(c)] Cross-sectional TEM images for Ti(50)-PDA, Ti(5)-PDA, and Pt-PDA. Numbers in the present TEM images correspond to the position measured by EELS. [(d)–(f)] edge, [(g)–(i)] edge, and [(i) and (j)] edge EELS spectra for Ti(50)-PDA, Ti(5)-PDA, and Pt-PDA.

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/content/aip/journal/apl/96/19/10.1063/1.3373594
2010-05-12
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale chemical state analysis of resistance random access memory device reacting with Ti
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3373594
10.1063/1.3373594
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