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Optical and microstructural properties versus indium content in films grown by metal organic chemical vapor deposition
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10.1063/1.3425761
/content/aip/journal/apl/96/19/10.1063/1.3425761
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3425761
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS data of , , and films grown on GaN/sapphire.

Image of FIG. 2.
FIG. 2.

Cross-sectional weak beam TEM images of (a) , (b) , and (c) , respectively. Some threading dislocations are visible in GaN while V-pits are distinctly visible in InGaN. The images are taken using diffraction vector .

Image of FIG. 3.
FIG. 3.

Calculated values of refractive index and extinction coefficient for GaN and (, 0.1, and 0.14) samples, obtained by using Tauc–Lorentz equation. Inset shows the extinction coefficient obtained for the three samples.

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/content/aip/journal/apl/96/19/10.1063/1.3425761
2010-05-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical and microstructural properties versus indium content in InxGa1−xN films grown by metal organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3425761
10.1063/1.3425761
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