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Ground state energy of compressively strained InGaN QWs grown on AONS plotted as a function of composition (bottom axis)/strain(top axis) for different values of QW thicknesses. The corresponding QW emission wavelength is shown on the right axis. The energy gap (indicated by ) between the first and second conduction band at the -point for layers is also plotted.
(a) The energy position of the three valance bands labeled as , , and , (b) excitonic band gap, and (c) the effective mass of holes corresponding to the three valance bands as functions of composition (bottom axis)/the residual strain (top axis), respectively, for layers grown on AONS. Note the switching of the lowest excitonic band gap/[effective mass] for strained InGaN QW layer from to /[ to ] corresponding to the switching of the and valence bands when the residual strain changes from compressive to tensile form, respectively.
The emission wavelength of tensile strain InGaN QWs grown on AONS as a function of composition for different values of QW thicknesses.
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