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(a) Bolometric THz detection system and (b) the THz-TDS system using a tunable OPO pump to generate THz radiation, detected using electro-optic sensing at 830 nm (probe beam 1) or the OPO signal (probe beam 2).
THz intensities from emitters fabricated on wafers (a) and (b) , at etch depths A–C (corresponding to Fe:InGaAs thicknesses of , , and , respectively).
Frequency spectra for excitation wavelengths from 1150 to 1550 nm of (a) and (b) . Inset: Time-domain pulse comparison between (solid) and (dashed) at 1550 nm excitation.
Frequency domain measurements of taken at excitation and detection wavelengths ranging from 1150 to 1550 nm using (a) ZnTe and (b) GaP detection crystals.
(a) THz power as a function of excitation wavelength for equivalent emitter pairs: and (squares); and (circles); and and (triangles). (b) Corresponding variation in photocurrent with bias voltage (1550 nm, 50 mW excitation) and (c) THz signal with excitation power, for emitters on wafers , , and (1550 nm excitation), and an LT:GaAs emitter under 800 nm excitation.
Layer structure for MOCVD-grown wafers used in this study.
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