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Tungsten oxide as a buffer layer inserted at the interface of pin-type amorphous silicon based solar cells
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10.1063/1.3427396
/content/aip/journal/apl/96/19/10.1063/1.3427396
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3427396

Figures

Image of FIG. 1.
FIG. 1.

XRD spectroscopy of tungsten oxide films deposited on different substrates.

Image of FIG. 2.
FIG. 2.

The dependence of parameters of the solar cells with and without a 2-nm-thick on the thickness of the .

Image of FIG. 3.
FIG. 3.

Schematic band diagrams of the cell. (a) Energy level of each layer and (b) band diagram variation due to the buffer layer at the interface.

Image of FIG. 4.
FIG. 4.

Spectral response of pin-type based solar cells with a layer and double window layer, respectively.

Tables

Generic image for table
Table I.

The deposition conditions of each layer in the fabricated pin-type based solar cells.

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/content/aip/journal/apl/96/19/10.1063/1.3427396
2010-05-11
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3427396
10.1063/1.3427396
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