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Defect reduction in silicon nanoparticles by low-temperature vacuum annealing
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10.1063/1.3428359
/content/aip/journal/apl/96/19/10.1063/1.3428359
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3428359
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Figures

Image of FIG. 1.
FIG. 1.

(a) Room temperature EPR spectra of undoped Si-NPs with a mean diameter of 16 nm before and after annealing in vacuum for 2 h at temperatures between 150 and (scaled up by a factor of 4). For the as-grown spectrum (open circles), a decomposition of the signal into contributions from centers (dashed line) and D centers (dotted line) and their sum (dashed-dotted line) are shown. In (b) the surface density [Si-db] is plotted as a function of the annealing temperature. For comparison, a typical H effusion spectrum is shown in (c). (d) The ratio of the Si-db concentration for annealed and as-grown undoped Si-NPs is plotted as a function of the particle size.

Image of FIG. 2.
FIG. 2.

EPR spectra of (a) untreated and HF etched undoped Si-NPs with a mean diameter of 12 nm at room temperature. The decomposition of the as-grown spectrum is shown as in Fig. 1. (b) The EPR spectra of Si-NPs only HF etched or only annealed are compared to those of Si-NPs after a combined treatment. These data are scaled up by a factor of 2.

Image of FIG. 3.
FIG. 3.

(a) Absorption coefficient and (b) current-voltage characteristics under illumination with a red high power LED of a Si-NPs layer after HF etching (solid line) and after a subsequent annealing at for 30 min (dashed line). For (a), the data were obtained by PDS measurements.

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/content/aip/journal/apl/96/19/10.1063/1.3428359
2010-05-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect reduction in silicon nanoparticles by low-temperature vacuum annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3428359
10.1063/1.3428359
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