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Influence of the growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)
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View: Figures


Image of FIG. 1.
FIG. 1.

AFM images of self-organized InAs structure (a) grown with species, (b) with and varying V/III ratio. Numbers below label the used BEP V/III ratios. With no shape transition is obtained. In case of the dot-like shape is kept over the whole investigated parameter range. For high V/III ratios more round-shaped dots with higher FWHM values in PL are observed.

Image of FIG. 2.
FIG. 2.

Shape transition of InAs islands for very low V/III ratios of (a) 7.5 and (b) 2 for growth mode. Another shape transition from dots to dashes can be observed.

Image of FIG. 3.
FIG. 3.

PL spectra of two different samples measured at 10 K (solid lines). The -grown sample (dot-like) shows a much narrower linewidth than the sample (dash-like). The dashed lines indicate the Gaussian fits of the peaks.

Image of FIG. 4.
FIG. 4.

PL spectrum at 10 K (solid line), corresponding Gaussian fit (dotted line) and AFM scan (inset) of the optimized sample with 6.0 MLs InAs and a V/III ratio of 15. Nearly all of the structures are dot-like, resulting in a very low FWHM.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)