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The impact of gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress
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10.1063/1.3429588
/content/aip/journal/apl/96/19/10.1063/1.3429588
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3429588

Figures

Image of FIG. 1.
FIG. 1.

The evolution of the transfer curves for a-IGZO TFTs with A SiNx gate insulators as a function of the BTIS time . The variations in the shift for A–C SiNx gate insulators. (inset, values shown in Table I).

Image of FIG. 2.
FIG. 2.

(a) Refractive index values of films with tensile and compressive stress with respect to film depth, (b) TOF-SIMS depth profiles for A–C gate insulators.

Image of FIG. 3.
FIG. 3.

FT-IR adsorption spectra for A–C gate insulators.

Tables

Generic image for table
Table I.

Deposition conditions and resulting properties of the films. (SCCM denotes cubic centimeter per minute at STP.)

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/content/aip/journal/apl/96/19/10.1063/1.3429588
2010-05-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3429588
10.1063/1.3429588
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