Full text loading...
The evolution of the transfer curves for a-IGZO TFTs with A SiNx gate insulators as a function of the BTIS time . The variations in the shift for A–C SiNx gate insulators. (inset, values shown in Table I).
(a) Refractive index values of films with tensile and compressive stress with respect to film depth, (b) TOF-SIMS depth profiles for A–C gate insulators.
FT-IR adsorption spectra for A–C gate insulators.
Deposition conditions and resulting properties of the films. (SCCM denotes cubic centimeter per minute at STP.)
Article metrics loading...