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Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition
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10.1063/1.3430737
/content/aip/journal/apl/96/19/10.1063/1.3430737
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3430737
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) HRXRD (0002) scans of the samples. The peak positions of the different materials are marked for clarification. The inset shows (0002) rocking curves of InAlN on a log scale with the FWHMs between 256 and 284 arcsec. (b) Typical PL spectra at 10 and 300 K. The inset shows intensity enhanced spectra of InAlN with FWHMs of 313 meV at 10 K and 391 meV at 300 K.

Image of FIG. 2.
FIG. 2.

[(a)–(d)] PL spectra at 5 K of all the samples. Each spectrum is composed of two components (dash lines) denoted as and , respectively. The open circles are measured data, and the solid line is the fitting result. (e) The intensity ratios of and as functions of the thickness of InAlN.

Image of FIG. 3.
FIG. 3.

Some results of sample D. (a) PL spectra and corresponding fitting results at 5, 100, 180, and 270 K. (b) The Arrhenius plots of the integrated intensities of and from 5 to 330 K. (c) the FWHMs of and as functions of temperature, the solid line is the fitting result using Eq. (1) . (d) Peak positions of and as functions of temperature.

Image of FIG. 4.
FIG. 4.

AFM images of all the samples.

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/content/aip/journal/apl/96/19/10.1063/1.3430737
2010-05-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3430737
10.1063/1.3430737
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