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Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition
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10.1063/1.3430737
/content/aip/journal/apl/96/19/10.1063/1.3430737
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3430737
/content/aip/journal/apl/96/19/10.1063/1.3430737
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/content/aip/journal/apl/96/19/10.1063/1.3430737
2010-05-14
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/19/10.1063/1.3430737
10.1063/1.3430737
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