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Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
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10.1063/1.3279157
/content/aip/journal/apl/96/2/10.1063/1.3279157
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/2/10.1063/1.3279157
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TMR curves of the MTJ with the ultrathin FeCo (0.5 nm) electrode. Magnetic fields were applied at 0° (in-plane) and 70° to the film plane.

Image of FIG. 2.
FIG. 2.

Schematic illustration of the spin-transfer induced FMR measurement set-up. SG, SM, and AM stand for signal generator, source meter, and amplitude modulation, respectively.

Image of FIG. 3.
FIG. 3.

Spin-transfer induced FMR signals measured under various (a) positive and (b) negative bias voltages.

Image of FIG. 4.
FIG. 4.

Peak frequency of the spin-transfer induced FMR signal as a function of the applied electric fields. The right vertical axis represents the surface anisotropy energy, as estimated from the peak frequency.

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/content/aip/journal/apl/96/2/10.1063/1.3279157
2010-01-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/2/10.1063/1.3279157
10.1063/1.3279157
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