Full text loading...
(a) The device structure and geometry used in the EBIC measurements. (b) Gallium alloy fraction and corresponding band gap as a function of depth obtained by secondary ion mass spectroscopy.
(a) EBIC quantum efficiency plots vs electron beam voltage. Solid curves are the result of theoretical calculations. Experimental points are displayed as symbols. The high voltage slope is used to calculate the bulk diffusion length. (b) Simulated collection probability vs distance used to obtain the solid curves in (a).
External quantum efficiency of each device vs wavelength. The observed long wavelength falloff in external quantum efficiency is consistent with the simulated collection efficiency in Fig. 2(b).
Solar simulator results showing the operating characteristics of the four devices. The space charge width (SCR) is obtained by the low temperature capacitance of each sample. The minority carrier diffusion length is obtained by the EBIC quantum efficiency versus beam voltage.
Article metrics loading...