banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Determination of the minority carrier diffusion length in compositionally graded solar cells using electron beam induced current
Rent this article for


Image of FIG. 1.
FIG. 1.

(a) The device structure and geometry used in the EBIC measurements. (b) Gallium alloy fraction and corresponding band gap as a function of depth obtained by secondary ion mass spectroscopy.

Image of FIG. 2.
FIG. 2.

(a) EBIC quantum efficiency plots vs electron beam voltage. Solid curves are the result of theoretical calculations. Experimental points are displayed as symbols. The high voltage slope is used to calculate the bulk diffusion length. (b) Simulated collection probability vs distance used to obtain the solid curves in (a).

Image of FIG. 3.
FIG. 3.

External quantum efficiency of each device vs wavelength. The observed long wavelength falloff in external quantum efficiency is consistent with the simulated collection efficiency in Fig. 2(b).


Generic image for table
Table I.

Solar simulator results showing the operating characteristics of the four devices. The space charge width (SCR) is obtained by the low temperature capacitance of each sample. The minority carrier diffusion length is obtained by the EBIC quantum efficiency versus beam voltage.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of the minority carrier diffusion length in compositionally graded Cu(In,Ga)Se2 solar cells using electron beam induced current