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Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) DF TEM micrograph of a (3 ML InAs/6 ML GaSb) SPSL, together with an intensity linescan. (b) Proposed element distribution profiles yielding to the simulated best reproducing the experimental intensity ratio (c).

Image of FIG. 2.
FIG. 2.

Magnification of the interface-related features in the intensity profile displaying (a) the sensitivity of the method to variations in the interface width as small as 0.1 ML, and (b) the results assuming element profiles based on error functions.

Image of FIG. 3.
FIG. 3.

Composition profiles across a (10 ML GaSb/10 ML InAs/1 ML InSb) SPSL showing (i) chemically broad interfaces and (ii) a different intermixing at the III- and V-element sublattice. The small shift in the distribution profiles for In and As is considered as an indirect evidence of the presence of the 1 ML InSb layer (arrows: indicate points at which the interface profiles are joined).

Image of FIG. 4.
FIG. 4.

(a) DF TEM image of the few ML thick (6 ML GaSb/2 ML InAs/1.5 ML InSb/2 ML InAs) SPSL, (b) simulated intensity profile that agrees best with the experimental results obtained after the composition profiles shown in (c).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy