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Strong localization effect in magnetic two-dimensional hole systems
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10.1063/1.3291673
/content/aip/journal/apl/96/2/10.1063/1.3291673
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/2/10.1063/1.3291673
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(004) X-ray diffraction curves for samples with conventional buffer and with overshoot. The arrows mark the peak arising from the active and the overshoot region according to the layer sequence. The dashed line denotes the diffraction angle expected for an unstrained layer.

Image of FIG. 2.
FIG. 2.

Longitudinal MR and Hall resistance traces (inset) at in dependence of the 2D hole density of one sample with a constant amount of Mn ions close to the 2DHG. The density was increased via field effect by applying a top-gate voltage (marked by arrows).

Image of FIG. 3.
FIG. 3.

Longitudinal MR at in dependence of Mn doping concentration (a) and field effect (b). (c) at for tensile and compressive strained active layers modulation doped with identical Mn concentrations in the doping layer. (d) Zero field resistance taken from (a) (triangles), (b) (dots), and (c) (squares) as a function of the 2D carrier density .

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/content/aip/journal/apl/96/2/10.1063/1.3291673
2010-01-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong localization effect in magnetic two-dimensional hole systems
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/2/10.1063/1.3291673
10.1063/1.3291673
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