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(004) X-ray diffraction curves for samples with conventional buffer and with overshoot. The arrows mark the peak arising from the active and the overshoot region according to the layer sequence. The dashed line denotes the diffraction angle expected for an unstrained layer.
Longitudinal MR and Hall resistance traces (inset) at in dependence of the 2D hole density of one sample with a constant amount of Mn ions close to the 2DHG. The density was increased via field effect by applying a top-gate voltage (marked by arrows).
Longitudinal MR at in dependence of Mn doping concentration (a) and field effect (b). (c) at for tensile and compressive strained active layers modulation doped with identical Mn concentrations in the doping layer. (d) Zero field resistance taken from (a) (triangles), (b) (dots), and (c) (squares) as a function of the 2D carrier density .
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