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Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below
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10.1063/1.3422474
/content/aip/journal/apl/96/20/10.1063/1.3422474
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3422474
/content/aip/journal/apl/96/20/10.1063/1.3422474
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/content/aip/journal/apl/96/20/10.1063/1.3422474
2010-05-18
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 °C
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3422474
10.1063/1.3422474
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