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Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below
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10.1063/1.3422474
/content/aip/journal/apl/96/20/10.1063/1.3422474
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3422474
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Phase diagram for HWCVD silicon growth on (100) silicon at 10 mT. Point shapes indicate the wire metal and flow, which were varied to alter the gas chemistry and growth. Point color indicates the layer phase: blue points are entirely epitaxial, red points have failed to poly-Si and green points have failed to a-Si:H. Solid lines correspond to the onset of H desorption for the cases of and 2 (see text). Systematic uncertainty in the substrate T is , as indicated by the representative error bar on the single data point at and .

Image of FIG. 2.
FIG. 2.

Dislocation densities, as measured by EBIC . The wire material and flow are indicated by the symbol. The solid line is an Arrhenius fit to the data (see text). In the inset, an representative EBIC image is shown.

Image of FIG. 3.
FIG. 3.

SIMS and RTSE fitting results. In (a) and (b), the H and O concentrations are shown for films grown with a W wire and 20 SCCM of . In (c) RTSE fitting results for the surface roughness and film thickness are shown for a film grown with a W wire and 2 SCCM of .

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/content/aip/journal/apl/96/20/10.1063/1.3422474
2010-05-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 °C
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3422474
10.1063/1.3422474
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