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Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage
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10.1063/1.3427392
/content/aip/journal/apl/96/20/10.1063/1.3427392
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3427392

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagrams of the -GaAs region for (a) WLSC-1, (b) QDSC-1, and (c) QDSC-2. AFM images of the QDs used in (d) QDSC-1 and (e) QDSC-2. Height contrast is 10 nm. (f) RT PL spectra of WLSC-1 (gray curve, ), QDSC-1 (orange curve, ), and QDSC-2 (red curve, ).

Image of FIG. 2.
FIG. 2.

(a) External quantum efficiency (EQE) and (b) one- sun characteristics of the baseline SC (dashed black curve), WLSC-1 (gray curve, , , QDSC-1 (orange curve, , ), and QDSC-2 (red curve, , ). Because the characteristics of WLSC-1 and QDSC-1 are similar (see Table I), only QDSC-1 is shown in (b) for sake of clarity.

Image of FIG. 3.
FIG. 3.

(a) Schematic diagram of the -GaAs region for QDSC-3 and QDSC-4. (b) X-SEM image of the QD region of QDSC-4. (c) EQE of the baseline SC (dashed black curve), WLSC-2 (gray curve, ), QDSC-3 (blue curve, ), and QDSC-4 (green curve, ). The inset in (c) shows the RT PL spectrum of QDSC-3.

Tables

Generic image for table
Table I.

Open circuit voltage , short circuit densities , FF, and efficiency for baseline, WL-, and QD-SCs under 1 sun illumination. The excitonic GS emission wavelength of the quantum material and the SL thickness are also presented.

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/content/aip/journal/apl/96/20/10.1063/1.3427392
2010-05-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3427392
10.1063/1.3427392
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