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InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
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10.1063/1.3427438
/content/aip/journal/apl/96/20/10.1063/1.3427438
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3427438
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Figures

Image of FIG. 1.
FIG. 1.

(a) The top-view SEM image of the NPSi. (b) The optical microscopy image of the surface of LED grown on NPSi.

Image of FIG. 2.
FIG. 2.

Bright-field images of LEDs grown on MPSi (a) and NPSi (b), (c) Multibeam dark-field images collected near zone axis. (d) Two-beam dark-field images collected using . Note that (c) and (d) are collected at the same region.

Image of FIG. 3.
FIG. 3.

Raman spectra of LEDs grown on NPSi and MPSi under back scattering geometry.

Image of FIG. 4.
FIG. 4.

(a) The I-V characteristics. (b) The L-I curves. The inset is the comparison of EL spectra at 20 mA injection current.

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/content/aip/journal/apl/96/20/10.1063/1.3427438
2010-05-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3427438
10.1063/1.3427438
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