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Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM images of arrayal formation of high aspect ratio rods on silicon substrates with (a) micrometer and (b) submicrometer features. (c) shows the formation of ultrafine features in the cylindrical shape where the wall has a thickness of 66 nm. The height of the hollow cylinder is .

Image of FIG. 2.
FIG. 2.

[(a) and (b)] The evolution of silicon nanograss on silicon substrates using different flows of reactant gases. (c) The SEM image of the grass realized on a previously patterned ring structure.

Image of FIG. 3.
FIG. 3.

The formation of micromachined interdigital structures suitable for capacitive sensors, (a) the KOH backside etching and (b) front vertical etching. (c) The formation of partially floated interdigital fingers with back-side micromachining and (d) the mask-less grass formation from backside of the sample, leading to the realization of nanograss structures on the “side-walls” of the vertical features. Inset in this part magnifies the partially floated features.

Image of FIG. 4.
FIG. 4.

The evolution of grass on the backside as well as the parallel blades of interdigital fingers. (a) The formation of fully suspended interdigital capacitive sensor, inset shows the grass on the backside. (b) The image of the fingers where corresponding insets show the evolution of partially isolated nanostructures on the vertical blades. A matrix network of partially isolated nanosized features are observed in this figure.

Image of FIG. 5.
FIG. 5.

The measured capacitance vs time for simple plate and those covered with nanostructures. A significant increase in the capacitance is observed as a result of side-wall structuring.


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Scitation: Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching