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Performance improvement of phase change memory cell by using a cerium dioxide buffer layer
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10.1063/1.3428578
/content/aip/journal/apl/96/20/10.1063/1.3428578
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3428578
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

I-V characteristics of set process of the PCM cells with and without layer (a) and R-V characteristics of the reset process (b).

Image of FIG. 2.
FIG. 2.

R-V characteristics of reset process of the PCM cell with buffer layer at different voltage pulse widths (10, 20, 50, 100, and 1000 ns) (a) and R-V characteristics of reset process of the PCM cell without buffer layer at different voltage pulse widths (20, 50, 100, 500, and 1000 ns) (b).

Image of FIG. 3.
FIG. 3.

I-V characteristic of 10 nm thickness thin film.

Image of FIG. 4.
FIG. 4.

Simulated temperature distributions of the PCM cells with and without a buffer layer (3 V, 50 ns): (a) without buffer layer, (b) with a buffer layer, and (c) temperature profiles along the black solid line in (d) sketch map of the T-shape PCM cell structure.

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/content/aip/journal/apl/96/20/10.1063/1.3428578
2010-05-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance improvement of phase change memory cell by using a cerium dioxide buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3428578
10.1063/1.3428578
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