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Improved interfacial state density in interfaces using metal-organic chemical vapor deposition
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View: Figures


Image of FIG. 1.
FIG. 1.

SIMS depth profile of elements C, Ga, and Al. The Ga, and Al were plotted in relative intensity (left axis) while the C was plotted in atomic concentration (right axis). The open square symbols represent the fitted error function of gallium profile. For inserted figure, TEM image of the CVD oxide/GaAs structure.

Image of FIG. 2.
FIG. 2.

XPS spectra of (a) , (b) , and (c) at oxide/GaAs interface. The open hexagons and curves represent the raw data and fitting peaks. The Shirley background subtraction was included in all XPS fittings. (d) HRTEM image of the interface between GaAs substrate and CVD .

Image of FIG. 3.
FIG. 3.

C-V characteristics of in situ (a) CVD and (b) ALD on GaAs. For inset in (b) distribution of CVD samples in the band gap extracted by the conductance-frequency method. [(c) and (d)] map of CVD and ALD samples. The dashed white line represents the position of the peak. The scale of maps (c) and (d) is different.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved interfacial state density in Al2O3/GaAs interfaces using metal-organic chemical vapor deposition