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Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic of the experiment, showing also the cross-sectional TEM micrograph, the SIMS boron depth profile, and the HRXRD strain profile of the sample after partial SPER, superimposed with the same depth scale.

Image of FIG. 2.
FIG. 2.

SIMS B depth profiles of the samples after partial SPER (dotted line), and after further annealing for 1 h at (crosses), (open circles), and (filled circles). The simulation of the B profile after 1 h at is also shown.

Image of FIG. 3.
FIG. 3.

Arrhenius plot of the strain integral S (open squares) and diffusion events gt (filled squares) data extracted from the HRXRD and the simulation of the SIMS results, respectively, as reported in Figs. 1 and 2. The fits of the data obtained using Eq. (1) for S (dashed line) and Eq. (2) for gt (continuous line) are also shown. The fits were obtained assuming the same common free parameters of the activation energy and prefactor describing the EOR dissolution rate as a function of temperature. The values obtained from the fit are also shown in the figure.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge