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Terahertz optical sideband emission in self-assembled quantum dots
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10.1063/1.3429681
/content/aip/journal/apl/96/20/10.1063/1.3429681
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3429681
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Figures

Image of FIG. 1.
FIG. 1.

Transmitted sideband spectrum taken at 4 K with an FEL wavelength of and a peak intensity of . The NIR peak intensity was . The transmitted laser line is attenuated and the and sidebands have been multiplied by a factor of 10 and 100, respectively, for clarity. The left inset shows the schematic setup, the right inset the PL spectra measured at 4 K.

Image of FIG. 2.
FIG. 2.

sideband conversion efficiency as a function of temperature. For temperatures up to 150 K (circles) the NIR wavelength was tuned to compensate for the shift in the GaAs band gap and ensure the same subset of dots was evaluated. For higher temperatures (squares) the NIR wavelength was fixed at 995 nm, hence a different subset of dots is examined at each temperature. In all cases the FEL peak intensity was and the NIR peak intensity was .

Image of FIG. 3.
FIG. 3.

sideband conversion efficiency as a function of incident NIR wavelength at 4 K for an FEL wavelength of and an FEL and NIR peak intensity of and , respectively. The dotted line shows the PLE QD spectrum.

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/content/aip/journal/apl/96/20/10.1063/1.3429681
2010-05-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz optical sideband emission in self-assembled quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3429681
10.1063/1.3429681
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