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Insertion losses vs frequency of a delay line based on AlN/sapphire structure. Measurements were performed before and after annealing at .
SEM images of the Pt/Ta electrodes placed on AlN/sapphire structure before annealing (a) after 30 min at (b) after 30 min at (c) IDT finger width is 2.3 micrometers.
XRD diagram of thick monocrystalline AlN film on sapphire substrate performed before (line) and after annealing at (scatter).
3D AFM images of the AlN surface before annealing (a) after 30 min at (b) after 30 min at (c).
Summary of the results.
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