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Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe–V/MgO/Fe magnetic tunnel junctions
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10.1063/1.3430064
/content/aip/journal/apl/96/20/10.1063/1.3430064
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3430064
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Variation in the average surface in-plane lattice parameter of MgO measured by RHEED during the growth on several Fe–V(001) surfaces.

Image of FIG. 2.
FIG. 2.

(a) Voltage noise power spectral density times area measured on the junctions with undoped, bottom doped or top doped electrodes with bias of 200 mV in the P state. The inset expands up to 2000 Hz the power spectral density for the junction with bottom doped electrode. The green horizontal line marks the noise power times area expected level of with resistance of and direct electron tunneling processes. (b) Dependence of zero bias TMR and normalized noise (Hooge factor), averaged over each set, as a function of V content in the bottom and upper electrodes.

Image of FIG. 3.
FIG. 3.

Normalized relative variation in the noise between AP and P alignments, as determined from Fig. 2(b) as a function of V content.

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/content/aip/journal/apl/96/20/10.1063/1.3430064
2010-05-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe–V/MgO/Fe magnetic tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3430064
10.1063/1.3430064
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