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(a) Variation in the average surface in-plane lattice parameter of MgO measured by RHEED during the growth on several Fe–V(001) surfaces.
(a) Voltage noise power spectral density times area measured on the junctions with undoped, bottom doped or top doped electrodes with bias of 200 mV in the P state. The inset expands up to 2000 Hz the power spectral density for the junction with bottom doped electrode. The green horizontal line marks the noise power times area expected level of with resistance of and direct electron tunneling processes. (b) Dependence of zero bias TMR and normalized noise (Hooge factor), averaged over each set, as a function of V content in the bottom and upper electrodes.
Normalized relative variation in the noise between AP and P alignments, as determined from Fig. 2(b) as a function of V content.
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