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Comparison of the three-terminal off-state and on-state breakdown for the MOS-MHEMT and referenced MHEMT.
Comparison of the gate current density vs at various for the MOS-MHEMT and referenced MHEMT. The swept from 2.5 to 4 V in 0.5 V per step.
Comparison of microwave characteristics at maximum with measured from 0.45 to 50 GHz. The inset shows the microwave characteristics vs gate length for the MOS-MHEMT.
The and associated gain as a function of the frequency for the MOS-MHEMT and referenced MHEMT.
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