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Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess
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10.1063/1.3430569
/content/aip/journal/apl/96/20/10.1063/1.3430569
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3430569
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Comparison of the three-terminal off-state and on-state breakdown for the MOS-MHEMT and referenced MHEMT.

Image of FIG. 2.
FIG. 2.

Comparison of the gate current density vs at various for the MOS-MHEMT and referenced MHEMT. The swept from 2.5 to 4 V in 0.5 V per step.

Image of FIG. 3.
FIG. 3.

Comparison of microwave characteristics at maximum with measured from 0.45 to 50 GHz. The inset shows the microwave characteristics vs gate length for the MOS-MHEMT.

Image of FIG. 4.
FIG. 4.

The and associated gain as a function of the frequency for the MOS-MHEMT and referenced MHEMT.

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/content/aip/journal/apl/96/20/10.1063/1.3430569
2010-05-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3430569
10.1063/1.3430569
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