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Conduction band diagram for the 3.2 THz QCL with (a) 0% diagonality and (b) 70% diagonality. Upper and lower laser levels are marked by bold solid lines.
Dependence of the peak gain on the active region lattice temperature for different operating frequencies and diagonalities. The shown results are for optimum bias, which only weakly depends on temperature and has for each structure been determined at 150 K as to yield maximum gain.
and for different degrees of diagonality for the (a) 2.3 THz QCL and (b) the 4.1 THz QCL at lattice temperatures of 150 K and 200 K, respectively. The bias is chosen as to maximize the peak gain.
Temperature dependence for (a) 30% diagonality and (b) 50% diagonality of the relative inversion and relative inverse linewidth . The peak gain improvement is .
Overview of the designed THz QCLs. All layer thicknesses are given in angstrom and bold numbers indicate barriers. The underlined wells are doped with a sheet density of in their 55 Å wide middle region.
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