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Modified ion sensitive field effect transistor sensors having an extended gate on a thick dielectric
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10.1063/1.3431296
/content/aip/journal/apl/96/20/10.1063/1.3431296
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3431296
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the proposed modified ISFET having an EG on a very thick insulator and (b) equivalent circuits for describing the operating principle of the proposed biosensor according to electrical characteristics.

Image of FIG. 2.
FIG. 2.

(a) Fabricated EGs of the modified ISFET formed on glass and (b) a mounting module to measure the modified ISFETs, including EG on glass, PDMS reaction bath, and PCB for a commercial p-MOSFET and an external ceramic capacitor.

Image of FIG. 3.
FIG. 3.

(a) SEM image of the surface on the EG after immobilization of protein G stabilized Au NPs and (b) the conductance change caused by interaction between mab-MA and microalbumin with time for the modified ISFET sensors.

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/content/aip/journal/apl/96/20/10.1063/1.3431296
2010-05-19
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modified ion sensitive field effect transistor sensors having an extended gate on a thick dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3431296
10.1063/1.3431296
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