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MR curves for an EB-MTJ and a rf-MTJ. Inset is a sketch of the multilayer stack investigated in this work, where thicknesses are in nanometers; .
The normalized power spectral density of the noise as a function of frequency for the EB- and rf-MTJ for the parallel and antiparallel states. The thermal noise and amplifier noise have been subtracted. Inset shows the evolution of the Hooge parameter of the rf-MTJs and EB-MTJs in their parallel state as a function of annealing temperature.
The RA dependence of the Hooge paremeter (a) and TMR (b) for two types of MTJs. The arrow on the left indicates the minimum noise level reported in Ref. 18. Lines are guides to the eye.
The bias dependence of the Hooge parameter for two types of MTJs at parallel and antiparallel states. Lines are guides to the eye.
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