No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Removal of near-interface traps at (0001) interfaces by phosphorus incorporation
3.D. Okamoto, H. Yano, K. Hirata, T. Hatayama, and T. Fuyuki, “Improved Inversion Channel Mobility in 4H SiC MOSFETs on Si Face Utilizing Phosphorus Doped Gate Oxide,” IEEE Electron Device Lett. (to be published).
8.F. Allerstam, H. Ö. Ólafsson, G. Gudjónsson, D. Dochev, E. Ö. Sveinbjörnsson, T. Rödle, and R. Jos, J. Appl. Phys. 101, 124502 (2007).
9.G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 22, 176 (2001).
10.G. Gudjonsson, H. Ö. Ólafsson, F. Allerstam, P. -Å. Nilsson, E. Ö. Sveinbjörnsson, H. Zirath, T. Rödle, and R. Jos, IEEE Electron Device Lett. 26, 96 (2005).
11.H. Ö. Ólafsson, Ph.D. thesis, Chalmers University of Technology, 2004.
12.G. Pensl, M. Bassler, F. Ciobanu, V. V. Afanas’ev, H. Yano, T. Kimoto, and H. Matsunami, Silicon Carbide–Materials, Processing and Devices, edited by A. Agarwal, M. Skowronski, J. A. Cooper, Jr., and E. Janzén, MRS Symposia Proceedings No. 640 (Materials Research Society, Pittsburgh, 2001), p. H3–2.
13.K. Morino, S. Miyazaki, and M. Hirose, Extended Abstracts of the 1997 International Conference of Solid State and Devices and Materials, Hamamatsu, Japan, 1997, pp. 18–19.
Article metrics loading...
Full text loading...
Most read this month