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Removal of near-interface traps at (0001) interfaces by phosphorus incorporation
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10.1063/1.3432404
/content/aip/journal/apl/96/20/10.1063/1.3432404
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3432404
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Distribution of interface state density near the conduction band edge for dry, NO-annealed, and -annealed oxides.

Image of FIG. 2.
FIG. 2.

Start voltage dependence of high-frequency (100 kHz) curves measured at 80 K for (a) dry, (b) NO-annealed, and (c) -annealed oxides. The gate voltage was swept from accumulation to depletion. Start voltage was increased from 2 to 18 V in 2 V steps. Dashed lines denote flat-band capacitance .

Image of FIG. 3.
FIG. 3.

TDRC spectra for dry, NO-annealed, and -annealed oxides. Electric field across the oxide during charging was approximately 4.5 MV/cm. Heating rate is 0.333 K/s. Discharging voltage is −5 V.

Image of FIG. 4.
FIG. 4.

Density of trapped electrons in NITs as a function of electric field across the oxide during charging. Dashed line denotes the total accumulated charge at the interface during charging.

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/content/aip/journal/apl/96/20/10.1063/1.3432404
2010-05-21
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/20/10.1063/1.3432404
10.1063/1.3432404
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