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Distribution of interface state density near the conduction band edge for dry, NO-annealed, and -annealed oxides.
Start voltage dependence of high-frequency (100 kHz) curves measured at 80 K for (a) dry, (b) NO-annealed, and (c) -annealed oxides. The gate voltage was swept from accumulation to depletion. Start voltage was increased from 2 to 18 V in 2 V steps. Dashed lines denote flat-band capacitance .
TDRC spectra for dry, NO-annealed, and -annealed oxides. Electric field across the oxide during charging was approximately 4.5 MV/cm. Heating rate is 0.333 K/s. Discharging voltage is −5 V.
Density of trapped electrons in NITs as a function of electric field across the oxide during charging. Dashed line denotes the total accumulated charge at the interface during charging.
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