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The PL spectra of the n-type bulk Ge (100) with different resistivity. The direct transition from the valley is more significant in Ge with lower resistivity.
(a) The band structure of n-type Ge and (b) the schematic diagrams of the band gap reduction in L and valleys with biaxial tensile strain. More electrons populate in the valley due to the reduction in the difference between direct and indirect band gaps.
PL spectra of n-type bulk Ge (100) under biaxial tensile strain at room temperature. The intensity of direct band gap transition increases with increasing strain.
The PL spectrum of strained-Ge (0.12%) fitted by the direct transition and indirect transition models. The transitions from conduction band of direct and indirect valleys to HH and LH bands contribute to the strained-Ge optical transitions.
(a) The strain induced band gap reduction in both direct and indirect valleys with biaxial tensile strain. (b) The radiative recombination intensity ratio of direct to indirect transitions. The direct-to-indirect intensity ratio is enhanced by 1.8 times under 0.37% strain.
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