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Electric field control of a quantum dot molecule through optical excitation
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10.1063/1.3430506
/content/aip/journal/apl/96/21/10.1063/1.3430506
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3430506
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Band-edge diagram (not to scale) of the sample structure showing intradot (arrow pointing down) and interdot (dotted arrow pointing diagonally down) recombination. The laser excitation generates e-h pairs in the top and bottom WLs (dashed arrows pointing up). Because of the applied electric field, the charges tunnel and accumulate, generating an electric field. (b) PL spectra of device. The narrowness of the interdot PL lines in the CQDs [panel (c)], compared to the broadness of the WL, make them ideal to detect small changes of 1 meV. (c) Due to this optically generated electric field, a shift of to higher energy (or equivalently, in field ) for the interdot emission at a fixed applied field (fixed PL energy) is observed.

Image of FIG. 2.
FIG. 2.

Wavelength dependence of the optically generated electric field (left axis), device photocurrent (right axis), and PLE intensity (arbitrary units). The optically generated electric field increases as the laser is tuned above the WL, saturating after the GaAs. The photocurrent and PLE intensity show a significant increase only above the GaAs.

Image of FIG. 3.
FIG. 3.

Power dependence curves showing the shift in bias as a function of laser power for a wavelength above and below the WL. For excitation above the WL a clear dependence on the applied field is observed. The saturation occurs much more rapidly at lower applied field whereas, at a higher field the optically generated charges more easily escape to the device. Exponential curves were fitted to the data to better show the trends.

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/content/aip/journal/apl/96/21/10.1063/1.3430506
2010-05-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electric field control of a quantum dot molecule through optical excitation
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3430506
10.1063/1.3430506
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